个人信息Personal Information
教授
博士生导师
硕士生导师
性别:女
毕业院校:大连理工大学
学位:博士
所在单位:材料科学与工程学院
学科:材料物理与化学
办公地点:三束实验室2号楼302室
联系方式:0411-84708380-8302
电子邮箱:lixiaona@dlut.edu.cn
Application of cluster-plus-glue-atom model to barrierless Cu-Ni-Ti and Cu-Ni-Ta films
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论文类型:期刊论文
发表时间:2014-11-01
发表刊物:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
收录刊物:SCIE、EI、Scopus
卷号:32
期号:6
ISSN号:0734-2101
摘要:To improve the thermal stability of copper and avoid its diffusion into surrounding dielectrics or interfacial reactions with them, the authors applied the cluster-plus-glue-atom model to investigate barrierless Cu-Ni-M (M = Ti or Ta) seed layers. The dissolution of the third element (Ti or Ta) in the Cu lattice with the aid of Ni significantly improved the thermal stability of the Cu seed layer. The appropriate M/Ni (M = Ti or Ta) ratio was selected to obtain a low resistivity: the resistivity was as low as 2.5 mu Omega cm for the (Ti1.5/13.5Ni12/13.5)(0.3)Cu-99.7 film and 2.8 mu Omega cm for the (Ta1.1/13.1Ni12/13.1)(0.4)Cu-99.6 film after annealing at 500 degrees C for 1 h. After annealing at 500 degrees C for 40 h, the two films remained stable without forming a Cu3Si compound. The authors confirmed that the range of applications of the cluster-plus-glue-atom model could be extended. Therefore, a third element M with negative enthalpies of mixing with both Cu and Ni could be selected, under the premise that the mixing enthalpy of M-Ni is more negative than that of M-Cu. (C) 2014 American Vacuum Society.