个人信息Personal Information
教授
博士生导师
硕士生导师
性别:女
毕业院校:大连理工大学
学位:博士
所在单位:材料科学与工程学院
学科:材料物理与化学
办公地点:三束实验室2号楼302室
联系方式:0411-84708380-8302
电子邮箱:lixiaona@dlut.edu.cn
Carbon-doped Cu films with self-forming passivation layer
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论文类型:期刊论文
发表时间:2014-04-15
发表刊物:SURFACE & COATINGS TECHNOLOGY
收录刊物:SCIE、EI、Scopus
卷号:244
页面范围:9-14
ISSN号:0257-8972
关键字:Cu interconnects; Carbon doping; Thin film
摘要:It was previously known that C-doping in Cu effectively enhances the film thermal stability and maintains a low electrical resistivity even upon high-temperature annealing, via a diffusion inhibiting the mechanism of C-stabilized oxide interlayer between Cu and Si. In the present work, the stability and resistivity are investigated in two Cu films doped with more C, respectively 2.9 at.% and 4.2 at.% as measured by EPMA. As expected, the thermal stability is even further enhanced, without significantly affecting the resistivity. After a systematic microstructural investigation by TEM, it is revealed that the relevant mechanism lies both in the enhanced stability via C dissolution in the silica native oxide layer at the Cu/Si interface and in the C-passivated Si surface zone beneath the layer. In the 4.2% C film, the Cu/Si interaction is mainly inhibited by self-forming SiC nano-particles and the resistivity remains below 3 u Omega.cm even upon annealing at 500 degrees C for 40 h. The C-doping can then be a simple process route towards manufacturing stable Cu interconnects. (C) 2014 Elsevier B.V. All rights reserved.