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Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates

Paper Publications

[261]赵佳明, 边继明, 李寿波, 李欣, 骆英民, 吕盛.用于智能激光防护武器的二氧化钒薄膜研究进展[J],兵器材料科学与工程,2011,34(2):102-106
[262]孙英岚, 边继明, 孙景昌, 梁红伟, 邹崇文, 骆英民, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..低温水热法生长ZnO纳米棒阵列的电子结构及光学特性(英文)[J],无机材料学报,2011,26(03):332-336
[263]Zhao, Ziwen, Hu, Lizhong, Zhang, Heqiu, Sun, Jingchang, Bian, Jiming, Jianze, HQ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser d...[J],APPLIED SURFACE SCIENCE,2011,257(11):5121-5124
[264]Chen, Ruiqun, Zou, Chongwen, Bian, Jiming, Sandhu, Adarsh, Gao, Wei, RQ (reprint author), Univ Auckland, Dept Chem & Mat Engn, 20 Symonds St, Private Bag 92019, Auckland 1142, New Zealand..Microstructure and optical properties of Ag-doped ZnO nanostructures prepared by a wet oxidatio...[J],NANOTECHNOLOGY,2011,22(10)
[265]Zhang, Dong, Bai, Yizhen, Qin, Fuwen, Jia, Fuchao, Wang, Jian, Bian, Jiming, YZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Deposition and properties of highly C-oriented GaN films on diamond substrates[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,102(2):353-358
[266]Zhang, Dong, Qin, Fuwen, Bai, Yizhen, Wang, Jian, Zhou, Zhifeng, Yu, Bo, Bian, Jiming, FW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Influence of N-2 flux on the improvement of highly c-oriented GaN films on diamond substrates[J],VACUUM,2011,85(7):725-729
[267]Zhang, Heqiu, Hu, Lizhong, Zhao, ZiWen, Ma, Jinxue, Qiu, Yu, Wang, Bin, Liang, Hongwei, Bian, Jiming, HQ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Photoluminescence study of Sb-doped ZnO films deposited by a closed tube CVT technique[J],VACUUM,2011,85(6):718-720
[268]秦福文, 白亦真, 边继明.Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on Diamond Substrates[J],Vacuum,2011,85(7):725-729
[269]白亦真, 秦福文, 边继明.Deposition and properties of highly C-oriented GaN films[J],Applied physics A,2011,102(2):353-358
[270]秦福文, 边继明, 吴爱民.The Preparation and Charateristics of InxGa1-xN（0.06 ≤x≤ 0.58） Films[J],中国物理快报,2011,28(10):108104-108104

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