Gvnh9z8C2JWFjbDpFfXsE3J3PldDcfEYnK0nzAQcPjnBYr7E6520Q7VKeBj8
Current position: Home >> Scientific Research >> Patents

采用电子束注入去除多晶硅中杂质硼的方法

Release Time:2016-08-09  Hits:

Disigner of the Invention: Yi Tan,姜大川,邹瑞洵,董伟

Institution: 材料科学与工程学院

Application Date: 2010-07-29

Application Number: 201010242065.9

Authorization Date: 2012-01-25

Prev One:一种直流电场强化合金定向凝固生长工艺

Next One:一种化学冶金提纯多晶硅的方法