AOVwqpU1WBVxkufBuWxZVpsk7rUYo0dohcZLGzAMLcoLKmpTBGFZl6gxWncp
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一种两步生长制备无孵化层微晶硅薄膜的方法

Release Time:2022-10-20  Hits:

First Author: John Wu

Disigner of the Invention: 岳红云,李廷举,Lin Guoqiang,Yi Tan

Institution: 材料科学与工程学院

Application Number: CN102492933A

Authorization Number: CN201110422212.5

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