Release Time:2022-10-19 Hits:
First Author: Yi Tan
Disigner of the Invention: 李国斌,姜大川,许富民,王强
Institution: 材料科学与工程学院
Application Number: CN101289188
Authorization Number: CN200810011631.8
Prev One:一种底部气冷的多晶硅半熔铸锭装置及工艺
Next One:一种化学冶金提纯多晶硅的方法