Current position: Home >> Scientific Research >> Paper Publications

Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film

Release Time:2023-03-15  Hits:

Date of Publication: 2022-10-09

Journal: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Institution: 微电子学院

Volume: 28

Issue: 3

Page Number: 2598-2601

ISSN: 0957-4522

Prev One:Study on sensing properties of a temperature-independent high pressure sensor base on tapered FBG

Next One:含InGaN插入层的非故意掺杂高阻GaN的外延生长和特性研究