location： Current position: Home >> Scientific Research >> Paper Publications

含InGaN插入层的非故意掺杂高阻GaN的外延生长和特性研究

Hits:

Date of Publication:2022-10-10

Journal:第一届全国宽禁带半导体学术及应用技术会议

Page Number:28-29

Note:新增回溯数据

Pre One:Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film

Next One:喷淋头高度对InGaN/GaN量子阱生长的影响
Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep