Hits:
Date of Publication:2022-10-03
Journal:APPLIED PHYSICS B LASERS AND OPTICS
Volume:109
Issue:4
Page Number:605-609
ISSN No.:0946-2171
Pre One:Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
Next One:The lattice distortion of beta-Ga2O3 film grown on c-plane sapphire
