Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
Release Time:2024-12-06 Hits:
Date of Publication: 2022-10-03
Journal: Scientific Reports
Institution: 微电子学院
Volume: 4
Page Number: 6322
ISSN: 2045-2322