大连理工大学主页平台管理系统 liuyang--Home-- Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

location： Current position: Home >> Scientific Research >> Paper Publications

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Hits:

Date of Publication:2022-10-03

Journal:Scientific Reports

Affiliation of Author(s):微电子学院

Volume:4

Page Number:6322

ISSN No.:2045-2322

Pre One:Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition

Next One:Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

Home

Scientific Research

Teaching Research

Awards and Honours

Enrollment Information

Student Information

My Album

Blog

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate