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Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition

Release Time:2024-12-06  Hits:

Date of Publication: 2022-10-03

Journal: CRYSTAL GROWTH DESIGN

Volume: 17

Issue: 6

Page Number: 3411-3418

ISSN: 1528-7483

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