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Date of Publication:2022-10-03
Journal:THIN SOLID FILMS
Affiliation of Author(s):微电子学院
Volume:589
Page Number:199-202
ISSN No.:0040-6090
Pre One:Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode
Next One:Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition
