Hits:
Date of Publication:2022-10-03
Journal:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS
Volume:26
Issue:3
Page Number:1591-1596
ISSN No.:0957-4522
Pre One:Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer
Next One:Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer