location： Current position: Home >> Scientific Research >> Paper Publications

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Hits:

Date of Publication:2022-10-03

Journal:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Volume:24

Issue:8

Page Number:2923-2927

ISSN No.:0957-4522

Pre One:Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere

Next One:Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD
Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep