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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Release Time:2024-12-06  Hits:

Date of Publication: 2022-10-03

Journal: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Volume: 24

Issue: 8

Page Number: 2923-2927

ISSN: 0957-4522

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