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Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere

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Date of Publication:2022-10-03

Journal:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Volume:23

Issue:2

Page Number:542-545

ISSN No.:0957-4522

Pre One:Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

Next One:Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer
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