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Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

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Date of Publication:2022-10-03

Journal:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Volume:25

Issue:1

Page Number:267-272

ISSN No.:0957-4522

Pre One:Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment

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