Release Time:2024-12-06 Hits:
Date of Publication: 2022-10-03
Journal: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS
Volume: 25
Issue: 1
Page Number: 267-272
ISSN: 0957-4522
Prev One:Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
Next One:Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin films