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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment

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Date of Publication:2022-10-03

Journal:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Volume:24

Issue:9

Page Number:3299-3302

ISSN No.:0957-4522

Pre One:Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition

Next One:Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate
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