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Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition

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Date of Publication:2022-10-02

Journal:CRYSTAL GROWTH DESIGN

Volume:18

Issue:2

Page Number:1147-1154

ISSN No.:1528-7483

Pre One:Ga2O3作载流子阻挡层的n-ZnO/p-GaN异质结发光二极管

Next One:Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
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