Current position: Home >> Scientific Research >> Paper Publications

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition

Release Time:2024-12-06  Hits:

Date of Publication: 2022-10-02

Journal: CRYSTAL GROWTH DESIGN

Volume: 18

Issue: 2

Page Number: 1147-1154

ISSN: 1528-7483

Prev One:Ga2O3作载流子阻挡层的n-ZnO/p-GaN异质结发光二极管

Next One:Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment