Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-09-01

Journal: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Included Journals: Scopus、EI、SCIE

Volume: 24

Issue: 9

Page Number: 3299-3302

ISSN: 0957-4522

Abstract: GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H-2 in metal organic chemical vapor deposition system. It was found that in situ H-2 treatment brought a porous SiC surface. The influence of H-2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H-2 pre-treatment can distinctly influence the GaN basic characteristics.