Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H-2 treatment
Release Time:2019-03-09 Hits:
Indexed by: Journal Article
Date of Publication: 2013-07-30
Journal: CHEMICAL PHYSICS LETTERS
Included Journals: EI、SCIE
Volume: 579
Page Number: 90-93
ISSN: 0009-2614
Abstract: High resistivity ZnO:Cu thin films were fabricated on c-plane sapphire substrate by low pressure metal-organic chemical vapor deposition (MOCVD). The samples were treated in H-2 ambient at high pressure and the thermal stability of the hydrogen-related donor-like defects was studied. Hall-effect measurement results presented that the high resistivity ZnO:Cu samples turn into n-type conductivity after H incorporation. The annealing results indicated that the hydrogenated ZnO:Cu could not recover high resistivity even after annealed at 750 degrees C. It is proposed that some unknown H-related donor-like defects still exist in the film after annealing. (C) 2013 Elsevier B.V. All rights reserved.