Hits:
First Author:xiaxiaochuan
Disigner of the Invention:lianghongwei,duguotong,liuyang,Shen Rensheng
Application Number:CN201510226430.X
Authorization Date:2015-05-06
Authorization number:CN104894520A
Pre One:一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法
Next One:一种氧化镓外延膜的制备方法及氧化镓外延膜