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一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法

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First Author:lianghongwei

Disigner of the Invention:liuyang,duguotong,Shen Rensheng,xiaxiaochuan

Application Number:CN201410006227.7

Authorization Date:2014-01-07

Authorization number:CN103730549A

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