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一种用于高质量氧化物半导体材料制备的MOCVD加热盘

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First Author:liuyang

Disigner of the Invention:lianghongwei,xiaxiaochuan,Shen Rensheng,陈远鹏

Application Number:CN201710261163.9

Authorization Date:2017-04-21

Authorization number:CN107083541A

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