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在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

Release Time:2022-10-20  Hits:

First Author: 夏晓川

Disigner of the Invention: 柳阳,申人升,梁红伟,杜国同,胡礼中

Institution: 微电子学院

Application Number: CN103456603A

Authorization Number: CN201310401102.X

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