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一种用于高质量氧化物半导体材料制备的MOCVD加热盘

Release Time:2022-10-19  Hits:

First Author: 柳阳

Disigner of the Invention: 梁红伟,夏晓川,申人升,陈远鹏

Institution: 微电子学院

Application Number: CN107083541A

Authorization Number: CN201710261163.9

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