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Dayu ZHOU
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Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Paper Publications
[81]Yao, Yifan, Dayu ZHOU, Li, Shuaidong, Wang, Jingjing, Sun, Nana, liufeng, Zhao Xiuming, 周大雨.Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films[J],JOURNAL OF APPLIED PHYSICS,2019,126(15)
[82]李帅东, Dayu ZHOU, 徐进, 石志鑫, Uwe Schr?der.HfO2基铁电薄膜在循环电场载荷下的极化翻转行为[J],湘潭大学自然科学学报,2019,41(5):104-120
[83]YE FEI, 肖海珠, Dayu ZHOU.H fO 2铁电相与四方相转变关系的第一性原理研究[J],功能材料,2014,16:16070-16073
[84], Dayu ZHOU, 李爱魁.Sputtered titanium nitride films with finely tailored surface activity and porosity for high perf...[J],Journal of Power Sources,2021,489(229406)
[85]李帅东, Dayu ZHOU, 石志鑫, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder.Involvement of Unsaturated Switching in the Endurance Cycling of Si-doped HfO2 Ferroelectric Thin...[J],ADVANCED ELECTRONIC MATERIALS,2021,6(8):2000264-
[86]Ali, Faizan, Dayu ZHOU, Mohsin, Hafiz Waqas, Daaim, Muhammad, Khan, Sheeraz, Hussain, Muhammad Muzammal, Sun, Nana.Recent Progress on Energy-Related Applications of HfO2-Based Ferroelectric and Antiferroelectri...[J],ACS APPLIED ELECTRONIC MATERIALS,2021,2(8):2301-2317
[87]Zhou, Dayu, Mikolajick, T., Schroeder, U., Xu, Jin, Heitmann, J., Jegert, G., Weinreich, W., Kerber, M., Knebel, S., Erben, E., DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116024, Liaoning, Peoples R China..Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator...[J],JOURNAL OF APPLIED PHYSICS,2010,108(12)
[88]Zhou, Dayu, Mueller, J., Xu, Jin, Knebel, S., Braeuhaus, D., Schroeder, U., DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116024, Peoples R China..Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin film...[J],APPLIED PHYSICS LETTERS,2012,100(8)
[89]Zhou, Dayu, Xu, Jin, Li, Qing, Guan, Yan, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, Schroeder, Uwe, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China..Wake-up effects in Si-doped hafnium oxide ferroelectric thin films[J],APPLIED PHYSICS LETTERS,2013,103(19)
[90]Zhou, Dayu, Schroeder, Uwe, Guan, Yan, Vopson, Melvin M., Xu, Jin, Liang, Hailong, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ...[J],ACTA MATERIALIA,2015,99:240-246
total122 9/13
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