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Paper Publications

[91]Zhou, Dayu, Mueller, J., Xu, Jin, Knebel, S., Braeuhaus, D., Schroeder, U., DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116024, Peoples R China..Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin film...[J],APPLIED PHYSICS LETTERS,2012,100(8)
[92]Zhou, Dayu, Xu, Jin, Li, Qing, Guan, Yan, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, Schroeder, Uwe, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China..Wake-up effects in Si-doped hafnium oxide ferroelectric thin films[J],APPLIED PHYSICS LETTERS,2013,103(19)
[93]Zhou, Dayu, Schroeder, Uwe, Guan, Yan, Vopson, Melvin M., Xu, Jin, Liang, Hailong, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ...[J],ACTA MATERIALIA,2015,99:240-246
[94]Yao, Yifan, Wang, Jingjing, Sun, Nana, Liu, Feng, Zhao, Xiuming, Zhou, Dayu, Li, Shuaidong, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films[J],JOURNAL OF APPLIED PHYSICS,2019,126(15)
[95]Liu, Xiaohua, Zhou, Dayu, Guan, Yan, Li, Shuaidong, Cao, Fei, Dong, Xianlin, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like th...[J],ACTA MATERIALIA,2018,154:190-198
[96]Ali, Faizan, Dong, Xianlin, Liu, Xiaohua, Zhou, Dayu, Yang, Xirui, Xu, Jin, Schenk, Tony, Mueller, Johannes, Schroeder, Uwe, Cao, Fei, DY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Mat Sci & Engn, Dalian 116024, Peoples R China..Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage[J],JOURNAL OF APPLIED PHYSICS,2017,122(14)
[97]Guan, Yan, Zhou, Dayu, Xu, Jin, Liu, Xiaohua, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, Schroeder, Uwe, DY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Mat Sci & Engn, Dalian 116024, Peoples R China..The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films[J],PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2015,9(10):589-593
[98]徐军, 周大雨, 陆文琪.Structrual and Electrical Properties of Reactive Magnetron Sputtered Yttrium-doped HfO2 Films[J],Chinese Physics B,2018,27(4):481031-481036
[99]Liang, Hailong, Xu, Jin, Zhou, Dayu, Wang, Xuexia, Liu, Xiaohua, Chu, Shichao, Xiaoying, DY (reprint author), Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Elect Beams, Dalian 116024, Peoples R China..Structure and electrical properties of pure and yttrium-doped HfO2 films by chemical solution d...[J],MATERIALS & DESIGN,2017,120:376-381
[100]Yan, Yong, Zhou, Dayu, Guo, Chunxia, Xu, Jin, Yang, Xirui, Liang, Hailong, Fangyang, Chu, Shichao, Liu, Xiaoying, DY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China., Zhou, Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054.Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared...[J],JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY,2016,77(2):430-436

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