标题：
Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD
点击次数：
论文类型：
期刊论文
发表刊物：
RSC ADVANCES
收录刊物：
SCIE、EI
卷号：
6
期号：
65
页面范围：
60068-60073
ISSN号：
2046-2069
摘要：
High-resistivity GaN (HR-GaN) epilayers with an in situ annealed InGaN interlayer were grown by MOCVD technique. Hall-effect measurements show a background carrier concentration as low as 1.0 x 10(12) cm(-3) and a high sheet resistivity of 2.1 x 10(8) Omega per square. Combining the high-resolution X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy characterization, the compensation mechanism through the carbon acceptors impurities induced by increased edge-type threading dislocations (TDs) was demonstrated. Additionally, few increase of the screw TDs density in the HR-GaN epilayers by introducing the annealed InGaN interlayer has been demonstrated, which is beneficial to the device reliability in AlGaN/GaN high electron mobility transistors.
发表时间：
2016-01-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院