标题：
A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film
点击次数：
论文类型：
期刊论文
发表刊物：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
收录刊物：
SCIE、EI、Scopus
卷号：
39
页面范围：
582-586
ISSN号：
1369-8001
关键字：
beta-Ga2O3 thin film; ICP etching; SF6; Dry etching
摘要：
Beta phase Gallium trioxide (beta-Ga2O3) thin film was grown by metal organic chemical vapor deposition technology. Mixture gases of SF6 and Ar were used for dry etching of beta-Ga2O3 thin film by inductively coupled plasma (ICP). The effect of SF6/Ar (etching gas) ratio on etch rate and film etching damage was studied. The etching rate and surface roughness were measured using F20-UN thin film analyzer and atomic force microscopy showing that the etching rate in the range between 30 nm/min and 35 nm/min with an improved surface roughness was obtained when the reactive mixed gas of SF6/Ar was used. The analysis of X-ray diffraction and transmission spectra further confirmed the non-destructive crystal quality. This work demonstrates that the properly proportioned mixture gases of SF6/Ar is suitable for the dry etching of beta-Ga2O3 thin film by ICP and can serve as a guide for future beta-Ga2O3 device processing. (C) 2015 Elsevier Ltd. All rights reserved.
发表时间：
2015-11-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院