标题：
Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition
点击次数：
论文类型：
期刊论文
发表刊物：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
收录刊物：
SCIE、EI
卷号：
27
页面范围：
841-845
ISSN号：
1369-8001
关键字：
Distributed Bragg reflectors; Silicon carbide; Ultraviolet;
Metal-organic chemical vapor deposition
摘要：
Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6E-SiC substrates by metal-organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiNx interlayer was introduced between the first pair of AlGaN/GaN DBR layers. Using this approach, crack-free 30-pair Al0.2Ga0.8N/GaN DBRs were obtained with peak reflectivity of 92.8% at 388 nm and a stop-band bandwidth of 16 nm. Our results reveal that a SiNx interlayer not only decreased the tensile strain but also improved the reflectivity via suppression of cracks. (C) 2014 Elsevier Ltd. All rights reserved.
发表时间：
2014-11-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院