夏晓川
  • 学位:博士
  • 职称:副教授
  • 学科:微电子学与固体电子学
  • 所在单位:集成电路学院
教师拼音名称:xiaxiaochuan
硕士生导师
博士生导师
主要任职:集成电路学院副院长
其他任职:副院长
性别:
毕业院校:吉林大学
所在单位:集成电路学院
办公地点:大连理工大学开发区校区信息楼211室
联系方式:0411-84707865
电子邮箱:xiaochuan@dlut.edu.cn
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标题:
The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition
点击次数:
论文类型:
期刊论文
发表刊物:
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物:
SCIE、EI
卷号:
25
期号:
10
页面范围:
4268-4272
ISSN号:
0957-4522
摘要:
The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition (MOCVD) was investigated. The property of GaN epilayer was investigated by atomic force microscopy, X-ray diffraction, low-temperature (10 K) photoluminescence and the Raman scattering. It is found that, as the spacing between showerhead and susceptor decreased, the growth rate increased and the tensile stress decreased. This result may be useful to control the stress in GaN thin films grown on silicon carbide substrate by MOCVD.
发表时间:
2014-10-01
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