标题：
Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth
点击次数：
论文类型：
期刊论文
发表刊物：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
收录刊物：
SCIE、EI、Scopus
卷号：
116
期号：
4
页面范围：
1561-1566
ISSN号：
0947-8396
摘要：
Mg-doped, 1-mu m-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality of p-GaN thin films was investigated by atomic force microscope, X-ray diffraction, Hall measurement and secondary ion mass spectroscopy. The surface roughness, crystalline quality and hole concentrations of p-GaN present a different variation tendency below and above 0.183 In/Mg ratio. The evolution process of indium-adlayer model considering adsorption, desorption and the transformation of indium mono-adlayer was proposed to explain the above phenomenon. Indium-assisted growth method can improve surface smoothness and crystalline quality of p-GaN effectively without affecting its electrical properties.
发表时间：
2014-09-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院