标题：
Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate
点击次数：
论文类型：
期刊论文
发表刊物：
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES
收录刊物：
SCIE、ISTIC
卷号：
30
期号：
4
页面范围：
556-559
ISSN号：
1005-9040
关键字：
Patterned sapphire substrate; GaN; Selective growth; Crystallographic
plane
摘要：
Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition. A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat, and the distribution morphology of GaN had significantly changed after it was recrystallized. GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level.
发表时间：
2014-08-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院