标题：
Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001)
点击次数：
论文类型：
期刊论文
发表刊物：
SUPERLATTICES AND MICROSTRUCTURES
收录刊物：
SCIE、EI
卷号：
70
页面范围：
54-60
ISSN号：
0749-6036
关键字：
Distributed Bragg reflectors; Metal organic vapor phase epitaxy; Double
AlN/AlGaN layer buffer; Ultraviolet
摘要：
Ultraviolet AlGaN/GaN distributed Bragg reflectors (DBRs) were grown on 2 in. Si-face 6H-SiC(0001) by metal organic vapor phase epitaxy (MOVPE). Two samples with single AlGaN buffer layer and AlN/AlGaN double buffer layers were introduced to grow AlGaN/GaN DBRs. The optical microscope images show that there are plenty of cracks on the surface of the DBR with single AlGaN buffer. While for DBR with AlN/AlGaN double buffer layer are free of cracks. A 30 period of Al0.2Ga0.8N/GaN DBR was obtained with measured reflectance of over 92%. The crack-free DBR has a stop-band centered around 395 nm with a FWHM at 14 nm. ( C) 2014 Elsevier Ltd. All rights reserved.
发表时间：
2014-06-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院