标题：
Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction
点击次数：
论文类型：
期刊论文
发表刊物：
CHINESE PHYSICS LETTERS
收录刊物：
SCIE、ISTIC、Scopus
卷号：
31
期号：
5
ISSN号：
0256-307X
摘要：
p-ZnO:As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO: As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of similar to 10(17) cm(-3) and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO: As by further introducing the p-ZnO/MgO/n-GaN heterostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods.
发表时间：
2014-05-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院