标题：
Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate
点击次数：
论文类型：
期刊论文
发表刊物：
APPLIED PHYSICS LETTERS
收录刊物：
SCIE、EI
卷号：
104
期号：
5
ISSN号：
0003-6951
摘要：
Negative differential resistance (NDR) behavior was observed in low Al-composition p-GaN/Mg-doped-Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate. The energy band and free carrier concentration of hetero-junction were studied by the model of the self-consistent solution of Schrodinger-Poisson equations combined with polarization engineering theory. At the forward bias of 0.95 V, the NDR effect has a high peak-to-valley current ratio of similar to 9 with a peak current of 22.4mA (similar to current density of 11.4 A/cm(2)). An interesting phenomenon of NDR disappearance after consecutive scans and recurrence after electrical treatment was observed, which was associated with Poole-Frenkel effect. (C) 2014 AIP Publishing LLC.
发表时间：
2014-02-03
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院