标题：
Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods
点击次数：
论文类型：
期刊论文
发表刊物：
CHINESE PHYSICS LETTERS
收录刊物：
SCIE、ISTIC、Scopus
卷号：
31
期号：
2
ISSN号：
0256-307X
摘要：
Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.
发表时间：
2014-02-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院