标题：
Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate
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论文类型：
期刊论文
发表刊物：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：
SCIE、EI
卷号：
25
期号：
1
页面范围：
267-272
ISSN号：
0957-4522
摘要：
GaN epilayer was grown on a new polyhedral patterned sapphire substrate (new PSS) by metal-organic chemical vapor deposition. The new PSS was prepared by combining the dry etching technique and wet etching technique. The X-ray diffraction indicated that the full width at half maximum values of (0002) and () diffraction peaks in the GaN epilayer grown on the new PSS were evidently smaller than that in the GaN epilayer grown on the normal treated PSS. The improvement of GaN quality was attributed to the reduction of threading dislocations (TDs) in GaN epilayer, and the mechanism of the reduction of TDs was analyzed. The influence of the new PSS on the optical properties as well as the residual stress in GaN epilayer was also discussed.
发表时间：
2014-01-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院