标题：
Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films
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论文类型：
期刊论文
发表刊物：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
收录刊物：
SCIE、EI
卷号：
16
期号：
5,SI
页面范围：
1303-1307
ISSN号：
1369-8001
关键字：
Cu-doped Ga2O3 thin film; X-ray diffraction; Optical bandgap; Amorphous
phase; Surface morphology
摘要：
Cu-doped Ga2O3 thin films were deposited by electron beam evaporation with subsequent annealing at 1000 degrees C in N-2 and O-2 for 1 h. The influence of the annealing atmosphere on the crystal structure, surface morphology and optical properties of Ga2O3:Cu films was investigated by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and transmittance and photoluminescence (PL) spectroscopy. The optical bandgap deduced from the absorption spectrum was greater for the O-2 annealed than for N-2 annealed samples. In both cases the bandgap was wider than for bulk beta-Ga2O3. The grain size and surface roughness were sensitive to the annealing atmosphere. Results confirmed that the annealed samples were polycrystalline beta-Ga2O3 with some amorphous phase. We hypothesize that annealing in oxygen led to recrystallization of the Ga2O3:Cu film. Annealing treatment improved the crystal quality of Ga2O3:Cu films and the PL intensity of the samples increased. (C) 2013 Elsevier Ltd. All rights reserved.
发表时间：
2013-10-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院