标题：
Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates
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论文类型：
期刊论文
发表刊物：
JOURNAL OF TESTING AND EVALUATION
收录刊物：
SCIE、Scopus
卷号：
41
期号：
5
页面范围：
798-803
ISSN号：
0090-3973
关键字：
GaN; metalorganic chemical vapor deposition; stress state; dislocations
摘要：
The stress states and influence of two opposite stress types under similar stress intensities on the structural and optical properties of GaN films grown on sapphire and 6H-SiC substrates via metalorganic chemical vapor deposition were investigated. The E-2 (high) phonon shifts of Raman spectra show that tensile stresses exist in the GaN epilayer grown on 6H-SiC, whereas compressive stresses appear in the film grown on sapphire, indicating that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual stresses in GaN films. Narrower full widths at half-maximum of E2 (high) phonon and double crystal X-ray diffraction peaks and the higher E2 (high) phonon intensity are visible for the GaN film grown on sapphire, illustrating that under almost equivalent stress intensities, tensile stresses have a much more negative influence on the crystalline quality of GaN epilayers. Finally, a numerical relationship between the luminescent band gap and the biaxial stresses of the GaN films is obtained at 10 K.
发表时间：
2013-09-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院