标题：
Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
点击次数：
论文类型：
期刊论文
发表刊物：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：
SCIE、EI、Scopus
卷号：
24
期号：
9
页面范围：
3299-3302
ISSN号：
0957-4522
摘要：
GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H-2 in metal organic chemical vapor deposition system. It was found that in situ H-2 treatment brought a porous SiC surface. The influence of H-2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H-2 pre-treatment can distinctly influence the GaN basic characteristics.
发表时间：
2013-09-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院