Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H-2 treatment
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发布时间：
2019-03-09
论文名称：
Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H-2 treatment
论文类型：
期刊论文
发表时间：
2013-07-30
发表刊物：
CHEMICAL PHYSICS LETTERS
收录刊物：
EI、SCIE
卷号：
579
页面范围：
90-93
ISSN号：
0009-2614
摘要：
High resistivity ZnO:Cu thin films were fabricated on c-plane sapphire substrate by low pressure metal-organic chemical vapor deposition (MOCVD). The samples were treated in H-2 ambient at high pressure and the thermal stability of the hydrogen-related donor-like defects was studied. Hall-effect measurement results presented that the high resistivity ZnO:Cu samples turn into n-type conductivity after H incorporation. The annealing results indicated that the hydrogenated ZnO:Cu could not recover high resistivity even after annealed at 750 degrees C. It is proposed that some unknown H-related donor-like defects still exist in the film after annealing. (C) 2013 Elsevier B.V. All rights reserved.
学位：博士
职称：副教授
学科： 微电子学与固体电子学
所在单位：集成电路学院