夏晓川
  • 学位:博士
  • 职称:副教授
  • 学科:微电子学与固体电子学
  • 所在单位:集成电路学院
教师拼音名称:xiaxiaochuan
硕士生导师
博士生导师
主要任职:集成电路学院副院长
其他任职:副院长
性别:
毕业院校:吉林大学
所在单位:集成电路学院
办公地点:大连理工大学开发区校区信息楼211室
联系方式:0411-84707865
电子邮箱:xiaochuan@dlut.edu.cn
当前位置: 中文主页 >> 科学研究 >> 论文成果
标题:
Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H-2 treatment
点击次数:
论文类型:
期刊论文
发表刊物:
CHEMICAL PHYSICS LETTERS
收录刊物:
SCIE、EI
卷号:
579
页面范围:
90-93
ISSN号:
0009-2614
摘要:
High resistivity ZnO:Cu thin films were fabricated on c-plane sapphire substrate by low pressure metal-organic chemical vapor deposition (MOCVD). The samples were treated in H-2 ambient at high pressure and the thermal stability of the hydrogen-related donor-like defects was studied. Hall-effect measurement results presented that the high resistivity ZnO:Cu samples turn into n-type conductivity after H incorporation. The annealing results indicated that the hydrogenated ZnO:Cu could not recover high resistivity even after annealed at 750 degrees C. It is proposed that some unknown H-related donor-like defects still exist in the film after annealing. (C) 2013 Elsevier B.V. All rights reserved.
发表时间:
2013-07-30
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