标题：
Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction
点击次数：
论文类型：
期刊论文
发表刊物：
NANOSCALE
收录刊物：
SCIE、EI、Scopus
卷号：
5
期号：
11
页面范围：
5080-5085
ISSN号：
2040-3364
摘要：
Electrically pumped lasing action has been realized in ZnO from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterostructure, an ultralow threshold of 3.9 mA was obtained. The mechanism of the laser is associated with the in-plane random resonator cavities formed in the ZnO films and the elaborate hollow-shaped SiO2 cladding pattern, which prevent the lateral diffusion of injection current and ultimately lower the threshold current of the laser diode. In addition, a waveguide mechanism due to different refractive indices of three epilayers enhances the guided optical field on the ZnO side, resulting in an improved light extraction efficiency.
发表时间：
2013-06-07
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院