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论文类型：期刊论文

发表时间：2012-07-20

发表刊物：VACUUM

收录刊物：SCIE、EI

文献类型：J

卷号：86

期号：12

页面范围：2044-2047

ISSN号：0042-207X

关键字：NiO; MOCVD; Growth temperature

摘要：We report the effect of growth temperature on structure, optical and electrical properties of NiO films fabricated by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD). It is found that the crystal quality of the NiO films has been improved by increasing the growth temperature. When the temperature is low, the NO film is composed of small and anomalous grains, whereas the film is composed of grains with a cubic shape following the NaCl-type structure when the temperature is higher. The samples marked A-D under the growth temperature of 510, 540,570 and 600 degrees C have optical band gap values of 3.93 eV, 3.82 eV, 3.73 eV and 3.55 eV, respectively. Comparatively, the controllable electrical properties of the films can be achieved by the variation of crystal quality arises from the growth temperature. (C) 2012 Elsevier Ltd. All rights reserved.

发表时间：2012-07-20