夏晓川
  • 学位:博士
  • 职称:副教授
  • 学科:微电子学与固体电子学
  • 所在单位:集成电路学院
教师拼音名称:xiaxiaochuan
硕士生导师
博士生导师
主要任职:集成电路学院副院长
其他任职:副院长
性别:
毕业院校:吉林大学
所在单位:集成电路学院
办公地点:大连理工大学开发区校区信息楼211室
联系方式:0411-84707865
电子邮箱:xiaochuan@dlut.edu.cn
当前位置: 中文主页 >> 科学研究 >> 论文成果
标题:
Oxygen-induced physical property variation of deposited ZnO films by metal-organic chemical vapor deposition
点击次数:
论文类型:
期刊论文
发表刊物:
APPLIED SURFACE SCIENCE
收录刊物:
SCIE、EI、Scopus
卷号:
258
期号:
22
页面范围:
8673-8677
ISSN号:
0169-4332
关键字:
ZnO; Oxygen flow rate; Deep-level emission; Oxygen vacancy
摘要:
High-quality ZnO thin films were deposited on 6H-SiC substrates using metal-organic chemical vapor deposition system. The physical properties of as-prepared ZnO layers under various oxygen flow rate were thoroughly studied. An increase in the O/Zn ratio yielded a decrease in growth rate. The experimental results also indicated that the size of ZnO nanoparticles, lattice constant and compressive stress inside the films displayed a regular variety as a function of O-2-flow rate. In addition, with increase of oxygen discharge, the position of deep-level emission in photoluminescence spectra demonstrated a significant shift, with transformation from oxygen vacancy to zinc vacancy. The qualitative calculation from X-ray photoelectron spectroscopy data showed that higher O-2-flow rate was able to promote O-Zn bond formation and reduce the number of oxygen vacancies. (C) 2012 Elsevier B.V. All rights reserved.
发表时间:
2012-09-01
扫一扫用手机查看