标题：
Oxygen-induced physical property variation of deposited ZnO films by metal-organic chemical vapor deposition
点击次数：
论文类型：
期刊论文
发表刊物：
APPLIED SURFACE SCIENCE
收录刊物：
SCIE、EI、Scopus
卷号：
258
期号：
22
页面范围：
8673-8677
ISSN号：
0169-4332
关键字：
ZnO; Oxygen flow rate; Deep-level emission; Oxygen vacancy
摘要：
High-quality ZnO thin films were deposited on 6H-SiC substrates using metal-organic chemical vapor deposition system. The physical properties of as-prepared ZnO layers under various oxygen flow rate were thoroughly studied. An increase in the O/Zn ratio yielded a decrease in growth rate. The experimental results also indicated that the size of ZnO nanoparticles, lattice constant and compressive stress inside the films displayed a regular variety as a function of O-2-flow rate. In addition, with increase of oxygen discharge, the position of deep-level emission in photoluminescence spectra demonstrated a significant shift, with transformation from oxygen vacancy to zinc vacancy. The qualitative calculation from X-ray photoelectron spectroscopy data showed that higher O-2-flow rate was able to promote O-Zn bond formation and reduce the number of oxygen vacancies. (C) 2012 Elsevier B.V. All rights reserved.
发表时间：
2012-09-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院