标题：
Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method
点击次数：
论文类型：
期刊论文
发表刊物：
CHINESE PHYSICS LETTERS
收录刊物：
Scopus、SCIE、ISTIC
卷号：
28
期号：
10
ISSN号：
0256-307X
摘要：
Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation. The Hall test showed that the hole concentration of the p-ZnO: As film was 2.6 x 10(17) cm(-3). The acceptor level was located at 135 meV above the valance band maximum, according to the low-temperature photoluminescence results. We then fabricated a p-ZnO:As/n-Si heterojunction light-emitting device. Its current-voltage curve showed the typical rectifying behavior of a p-n diode. At forward current injections, the electroluminescence peaks, which cover the ultraviolet-to-visible region, could be clearly detected.
发表时间：
2011-10-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院