标题：
Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes
点击次数：
论文类型：
期刊论文
发表刊物：
JOURNAL OF LUMINESCENCE
收录刊物：
SCIE、EI
卷号：
131
期号：
8
页面范围：
1645-1648
ISSN号：
0022-2313
关键字：
Metal-organic chemical vapor deposition; MgZnO; Electroluminescence
摘要：
ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively. (C) 2011 Elsevier B.V. All rights reserved.
发表时间：
2011-08-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院