标题：
Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD
点击次数：
论文类型：
期刊论文
发表刊物：
CHINESE PHYSICS LETTERS
收录刊物：
Scopus、SCIE、ISTIC
卷号：
28
期号：
7
ISSN号：
0256-307X
摘要：
NiZnO thin films are grown on c-plane sapphire substrates by using a photo-assisted metal organic chemical vapor deposition (MOCVD) system. The effect of the Ni content on the crystalline, optical and electrical properties of the films are researched in detail. The NiZnO films could retain a basic wurtzite structure when the Ni content is less than 0.18. As Ni content increases, crystal quality degradation could be observed in the x-ray diffraction patterns and a clear red shift of the absorption edge can be observed in the transmittance spectrum. Furthermore, the donor defects in the NiZnO film can be compensated for effectively by increasing the Ni content. The change of Ni content has an important effect on the properties of NiZnO films.
发表时间：
2011-07-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院