标题：
Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer
点击次数：
论文类型：
期刊论文
发表刊物：
APPLIED SURFACE SCIENCE
收录刊物：
SCIE、EI
卷号：
257
期号：
10
页面范围：
4685-4688
ISSN号：
0169-4332
关键字：
ZnO homojunction; Arsenic; Light-emitting diode; Metal organic chemical
vapor deposition
摘要：
In this paper, we proposed a new p-type ZnO doping method with metal organic chemical vapor deposition (MOCVD) technology by inserting a GaAs interlayer between substrate and ZnO epitaxial layer. The doping concentration of p-type ZnO film is able to be controlled by adjusting the thickness of the GaAs interlayer. With this method, we fabricated n-ZnO/p-ZnO: As homojunction light-emitting diode (LED) on ITO-glass substrate pre-coated with 20 nm GaAs interlayer. The device exhibits a typical rectifying behavior by current-voltage (I-V) measurement. When the device is forward biased, UV-vis electroluminescence (EL) emissions can be observed clearly. (C) 2010 Elsevier B. V. All rights reserved.
发表时间：
2011-03-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院