标题：
The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD
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论文类型：
期刊论文
发表刊物：
JOURNAL OF LUMINESCENCE
收录刊物：
SCIE、EI
卷号：
131
期号：
2
页面范围：
280-284
ISSN号：
0022-2313
关键字：
ZnO; MOCVD; Electrical property
摘要：
ZnO film was firstly prepared by PA-MOCVD method on the substrate pre-coated with GaAs interlayer Hall measurement found that the GaAs interlayer had important effects on the electrical behavior of the ZnO film It could make the ZnO film convert to p-type conductivity The XPS results confirmed that the acceptor was arsenic And the acceptor level was 130 meV above the ZnO valence band maximum Low-temperature PL measurement was introduced to investigate the optical properties of both as-grown n-type and arsenic doped p-type ZnO films Then based on this technology ZnO homojunction light emitting device (LED) was fabricated with arsenic doped p-type ZnO and unintentionally doped n-type ZnO on GaAs/p(+)-Si substrate Its current-voltage (I-V) character showed a typical rectification behavior which was different from the n-ZnO/p(+)-Si structure The UV-visible (385-580 nm) electroluminescence was detected under relatively low current injection condition from the n-ZnO/p-ZnO/p(+)-Si LED (C) 2010 Elsevier B V All rights reserved
发表时间：
2011-02-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院